Cover of: Point Defects in Semiconductors II | Jacques Bourgoin

Point Defects in Semiconductors II

Experimental Aspects
  • 295 Pages
  • 4.66 MB
  • 1278 Downloads
  • English
by
Springer Berlin Heidelberg , Berlin, Heidelberg
Crystallography, Ph
Statementby Jacques Bourgoin, Michel Lannoo
SeriesSpringer Series in Solid-State Sciences -- 35, Springer series in solid-state sciences -- 35.
ContributionsLannoo, Michel
Classifications
LC ClassificationsQD901-999
The Physical Object
Format[electronic resource] :
Pagination1 online resource (xvi, 295 pages 116 illustrations).
ID Numbers
Open LibraryOL27081640M
ISBN 10364281834X, 3642818323
ISBN 139783642818349, 9783642818325
OCLC/WorldCa851382056

Point Defects in Semiconductors II book are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in.

From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be Point Defects in Semiconductors II book used to study its interesting electronic properties.

Point Defects in Semiconductors II: Experimental Aspects (Springer Series in Solid-State Sciences) (Vol 2) Hardcover – J by J. Bourgoin (Author) › Visit Amazon's J. Bourgoin Page. Find all the books, read about the author, and more.

See search results for this Cited by: Plamen P. Paskov, Bo Monemar, in Defects in Advanced Electronic Materials and Novel Low Dimensional Structures, Abstract. Point defects in semiconductors play a fundamental role for the material properties. Dopants like impurities forming shallow donors and acceptors provide the means of controlling the electrical conductivity of the material, which is the basis of many applications in.

Summary The chapter contains sections titles: Introduction Silicon Other Group IV Semiconductors II ‐ VI Semiconductors III‐V Semiconductors Summary and Overview Acknowledgements References Intrinsic Point Defects in Semiconductors - Handbook of Semiconductor Technology - Wiley Online LibraryAuthor: George D.

Watkins. defects that can exist within the crystal lattice of any pure material.

Details Point Defects in Semiconductors II EPUB

In general, such intrinsic lattice defects can be broadly classified in terms of dimensionality, viz., point, line, plane, and spatial or volume defects. Moreover, any foreign species present within the crystal lattice may obviously also be regarded as a kind of Size: KB. Book chapter Full text access Chapter Seven - Surface and Defect States in Semiconductors Investigated by Surface Photovoltage Daniela Cavalcoli, Beatrice Fraboni, Anna Cavallini.

Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.

The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation. 25th International Conference on Book of ABstrActs St Petersburg, Russia, July 20–24, Defects in Book of A Semiconductors B str A cts ICDS 9 ICDS ISBN File Size: 1MB.

This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment.

The physical assumptions and approximations are emphasized. Dopants and defects in semiconductors. By Christopher Castleton patch in the provision of graduate level primers focused on properties and characterisation methods for semiconductor point defects.

Download Point Defects in Semiconductors II EPUB

This book fills it neatly. It falls into three parts: chapters 1–3 introduce the basics of semiconductors, defects, growth and doping; chapters. Point defects in semiconductors can trap free charge carriers and localize excitons.

The interaction between these defects and charge carriers becomes stronger Cited by: 2. Defects in group IV semiconductors 20 Introduction 20 Physico-chemical properties of point defects in the diamond lattice: experimental results and theoretical modelling 22 Theoretical and experimental evidences 22 Structure of point defects 25 Generation of equilibrium point defects, thermodynamics and kinetics defects, when they replace an intended atom at a lattice position, or interstitial impurities [4].

Figure 1 provides examples for four of the previously stated defects. Fig 1. Common point defects in semiconductors. Substitutional and interstitial defects involve a separate Area defects are thought of as extended point defects,File Size: 68KB.

Get this from a library. Point Defects in Semiconductors II: Experimental Aspects. [Jacques Bourgoin; Michel Lannoo] -- In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the.

This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors.

The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in important feature of this book are the special papers on defects in SiC.

Crystallographic defects are interruptions of regular patterns in crystalline are common because positions of atoms or molecules at repeating fixed distances determined by the unit cell parameters in crystals, which exhibit a periodic crystal structure, are usually imperfect.

The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics.

Volume is indexed by Thomson Reuters CPCI-S (WoS).The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; : J.D.

Murphy. @article{osti_, title = {Point defects in metals. Introduction to the theory}, author = {Leibfried, G. and Breuer, N.}, abstractNote = {An introduction to the theory of defects in metals is given with emphasis on the mechanical property changes.

The physics is based on the properties of a single defect which determines the property changes produced by many defects.

The donor/acceptor character of anion/cation vacancies in III-V and II-VI semiconductors is found to be "invertible" via two different structural modification processes. Get this from a library.

Point defects in solids / 2, Semiconductors and molecular crystals. A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor- and acceptor-like impurities and point defects, which offers a unified understanding for “shallow” and “deep” impurities and point Size: 3MB.

The prospects for localised point defect control within II-VI compound semiconductors are considered with reference to doping, thermal annealing, electron and ion beam irradiation and localised. Electronic structures of impurities and point defects in semiconductors.

Yong Zhang* 1. Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, NCUSA. Abstract. A brief history of the impurity theor iesin Cited by: 2.

This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment.

The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main. Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade.

These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings. field of the defects and surfaces of semiconductors from a common point of view.

Work was begun on the writing of such a book; however, the field expanded explosively, changing and advancing so rapidly and giving rise to so large a literature. Local electric fields appeared in dielectric and semiconductors due to the destruction of symmetry, creating the vacancies, point defects, and chemical impurities in material.

By increasing external electric field value, numerous structural changes will be generated. Point defects in silicon films were characterized by using electron-paramagnetic resonance spectroscopy and laser picosecond Author: Dmitry E.

Milovzorov. There are many forms of crystal point defects.A defect wherein a silicon atom is missing from one of these sites is known as a 'vacancy' defect. If an atom is located in a non-lattice site within the crystal, then it is said to be an 'interstitial' the interstitial defect involves a silicon atom at an interstitial site within a silicon crystal, then it is referred to as a 'self.

Description Point Defects in Semiconductors II PDF

First-principles calculations have evolved from mere aids in explaining and supporting experiments to powerful tools for predicting new materials and their properties. In the first part of this review we describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in by:.

The Garland Science website is no longer available to access and you have been automatically redirected to INSTRUCTORS. All instructor resources (*see Exceptions) are now available on our Instructor instructor credentials will not grant access to the Hub, but existing and new users may request access student resources previously .In this chapter, phenomenological theories of PL are presented and compared with experimental results on PL from wide-bandgap semiconductors, primarily GaN.

Types of electron transitions leading to PL are defined in Section The rate equations model and the configuration-coordinate (CC) model are presented in Section In particular, we will show how to estimate the concentrations of.Series: Semiconductors and Semimetals Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.

Originally widely known as the "Willardson and Beer" Series, it has succeeded in .